Modeling of Large Scale RF-MEMS Circuits Using Efficient Time-Domain Techniques

RF-MEMS design is made difficult due to the lack of tools capable of simulating both MEMS devices and their surrounding circuits. Often MEMS components can have structures more than 100 times smaller than the surrounding circuit. This paper presents FDTD based techniques that can be used to simulate large structures containing finely detailed components. Particularly, a split-cell modeling technique is presented that allows for the modeling of a metal that intersects a cell. This technique is applied to the modeling of a MEMS capacitor. The technique allows for large cells to be used to model the entire device, with the split-cell modeling realizing the capacitor plate within a cell.